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DOUBLE LIGHT ELECTRONICS TECHNOLOGY CO.,LTD

City:shenzhen

Province/State:guangdong

Country/Region:china

Contact Person:MrChen

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China GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode wholesale

GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode

Name: GaAlAs 120Deg 1000mW 850nm 1W Infrared Emitting Diode
Brand: Double Light
Price: 1 USD

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Brand Name :Double Light

Model Number :DL-HP10SIRA-1SIR120

Certification :ISO9001:2008,ROHS

Place of Origin :China (mainland)

MOQ :10,000pcs

Price :Negotiated

Payment Terms :Telegraphic Transfer in Advance (Advance TT, T/T)

Supply Ability :15,000,000pcs per Day

Delivery Time :5-7 working days after received your payment

Packaging Details :Dimensions per Unit:0.28 × 0.2 × 0.13 Meters • Weight per Unit:3.5 Kilograms • Units per Export Carton:40000 • Export Carton Dimensions L/W/H: 0.45 × 0.28 × 0.27 Meters • Export Carton Weight:14.2 Kilograms

Chip Material :GaAlAs

Power Dissipation :1000mW

Reverse Voltage :5V

Peak Emission Wavelength :850nm

Forward Current :350mA

Viewing Angle :120 Deg

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850nm Infrared Led 1W High Power Infrared LED Red Light Emitting Diode

DL-HP10SIRA-1SIR120.pdf

Features:

High reliability.
High radiant intensity.
Low forward voltage.
Peak wavelength λp=850nm.
The product itself will remain within RoHS compliant version.

Descriptions:

The DL-HP10SIR Infrared Emitting Diode is a high intensity diode.
The device is spectrally matched with phototransistor, photodiode and infrared receiver module.

Applications:

Free air transmission system.
Optoelectronic switch.
Floppy disk drive.
Infrared applied system.
Smoke detector.

Part No.	Chip Material	Lens Color	Source Color
DL-HP10SIRA-1SIR120	GaAlAs	Water Clear	Infrared

Notes:

All dimensions are in millimeters.
Tolerance is ± 0.25 mm (.010″) unless otherwise specified.
Specifications are subject to change without notice.

Absolute Maximum Ratings at Ta=25℃

Parameters	Symbol	Max.	Unit
Power Dissipation	PD	1000	mW
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width)	IFP	1.00	A
Forward Current	IF	350	mA
Reverse Voltage	VR	5	V
Operating Temperature Range	Topr	-10℃ to +70℃
Storage Temperature Range	Tstg	-20℃ to +80℃
Soldering Temperature	Tsol	260℃ for 5 Seconds

Electrical Optical Characteristics at Ta=25℃

Parameters	Symbol	Min.	Typ.	Max.	Unit	Test Condition
Radiant Intensity	Ie	110	180	----	mW/Sr	IF=350mA
Viewing Angle *	2θ1/2	----	120	----	Deg	(Note 1)
Peak Emission Wavelength	λp	----	850	----	nm	IF=350mA
Spectral Bandwidth	△λ	----	45	----	nm	IF=350mA
Forward Voltage	VF	1.30	1.50	1.80	V	IF =350mA
Reverse Current	IR	----	----	50	µA	V R =5V

Notes:

θ 1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity.