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0.80mm Height 0603 Package Infrared Chip LED high power ir led 850nm 120Deg
0603 Infrared Emitting Diode
Main Applications
CCTV
Parameters | Symbol | Max. | Unit |
Power Dissipation | PD | 95 | mW |
Peak Forward Current (1/10 Duty Cycle, 0.1ms Pulse Width) | IFP | 500 | mA |
Forward Current | IF | 50 | mA |
Reverse Voltage | VR | 5 | V |
Operating Temperature Range | Topr | -40℃ to +80℃ | |
Storage Temperature Range | Tstg | -40℃ to +100℃ | |
Lead Soldering Temperature | Tsld | 260℃ for 5 Seconds |
Electrical Optical Characteristics at Ta=25℃
Parameters | Symbol | Min. | Typ. | Max. | Unit | Test Condition |
Radiant Intensity * | Ee | 0.35 | 0.45 | --- | mW/sr | IF=20mA |
Viewing Angle * | 2θ 1/2 | --- | 140 | --- | Deg | IF=20mA (Note 2) |
Peak Emission Wavelength | λp | --- | 880 | --- | nm | IF=20mA (Note 3) |
Spectral Bandwidth | △λ | --- | 45 | --- | nm | IF=20mA |
Forward Voltage | VF | --- | 1.40 | 1.90 | V | IF=20mA |
Reverse Current | IR | --- | --- | 10 | µA | VR=5V |
Notes:
Luminous (Radiant) Intensity Measurement allowance is ± 10%. θ1/2 is the off-axis angle at which the luminous intensity is half the axial luminous intensity. The dominant wavelength (λp) is derived from the CIE chromaticity diagram and represents the single wavelength which defines the color of the device.