940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

940nm Infrared Emitting Diode Tranmitter IR Module Infrared Phototransistor Ondition IC=100μA, Ee=0mW/cm²

5mm LED Phototransistor

1. Features:

1. 5mm round standard t-1 3/4 package.
2. Fast response time.
3. High photo sensitivity.
4. Small junction capacitance.
5. The product itself will remain within RoHS compliant Version.

1. Descriptions:

1. The 583PTD is a high speed and high sensitive silicon NPN phototransistor in a standard Φ5 package.
2. Due to its black epoxy, the device is matched to visible light and infrared radiation.

1. Applications:

1. Infrared applied system.
2. Optoelectronic automatic control system.
3. Optoelectronic switch.
4. Camera.
5. Printer.
6. Counters and sorters.
7. Encoders.
8. Floppy disk drive.
9. Video camera, tape and card readers.
10. Position sensors.

1. Absolute Maximum Ratings at Ta=25℃

   Parameters	Symbol	Rating	Unit
   Power Dissipation	PD	75	mW
   Collector-Emitter Voltage	VCEO	30	V
   Emitter-Collector-Voltage	VECO	5	V
   Collector Current	IC	20	mA
   Operating Temperature	TOPR	-40 to +85	℃
   Storage Temperature	TSTG	-40 to +100	℃
   Lead Soldering Temperature	TSOL	260℃	℃

   Electrical Optical Characteristics at Ta=25℃

   Parameters	Symbol	Min.	Typ.	Max.	Unit	Condition
   Collector-Emitter Breakdown Voltage	BVCEO	30	---	---	V	IC=100μA, Ee=0mW/cm²
   Emitter-Collector Breakdown Voltage	BVECO	5	---	---	V	IE=100μA, Ee=0mW/cm²
   Collector-Emitter Saturation Voltage	VCE(SAT)	---	---	0.40	V	IC=0.70mA, Ee=1mW/cm2
   Collector Dark Current	ICEO	---	---	100	nA	Ee=0mW/cm², VCE=20V
   On-State Collector Current	IC(ON)	0.70	2.00	---	mA	Ee=1mW/cm², VCE=5V
   Optical Rise Time (10% to 90%)	TR	---	15	---	μs	VCE=5V, IC=1mA, RL=100Ω
   Optical Fall Time (90% to 10%)	TF	---	15	---
   Reception Angle	2θ1/2	---	30	---	Deg
   Wavelength Of Peak Sensitivity	λP	---	940	---	nm
   Rang Of Spectral Bandwidth	λ0.5	400	---	1100	nm